The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Fundamentals of epitaxy

[14p-2W-11~16] 15.7 Fundamentals of epitaxy

Mon. Sep 14, 2015 4:45 PM - 6:15 PM 2W (234-2(North))

座長:高橋 正光(原子力研究)

5:00 PM - 5:15 PM

[14p-2W-12] Mathematical Analysis of InGaAs Surface Reconstruction Distribution and
Regularity of QD Formation

〇Tomoya Konishi1, Gavin Bell2, Shiro Tsukamoto1 (1.NIT, Anan, 2.Univ. Warwick)

Keywords:surface reconstruction,STM,spatial point analysis

Recently we have reported precisely on the spatial regularity of self-assembled InAs QDs on an InxGa1-xAs wetting layer (WL). We pay attention on nm-sized surface reconstruction territories (SRTs) of WL, as composition fluctuations seeding QD nucleation. We quantify the spatial regularity both of QDs and SRTs using the Hopkins-Skellam index (HSI), which is popular in the life science but not in the physical science. We find that the spatial regularity of QDs is traced back to that of the (n × 3) SRTs as early as 0.6 monolayers of InAs coverage. This regularity is disturbed by the (n × 4) SRTs which appear at higher coverage.