[14p-2W-1~10] 15.3 III-V-group epitaxial crystals

[14p-2W-9] Control of surface morphology of capped InAs quantum dots wafer: increase of surface mound height by controlling growth rate

〇Masahiro Kakuda¹, Kazuhiro Kuruma², Jinkwan Kwoen¹, Yasutomo Ota¹, Katsuyuki Watanabe^1,2, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, 2.IIS, The Univ. of Tokyo)

Keywords:molecular beam epitaxy