[14p-CE-5~11] New functional GaN-based laser diodes and the applications

[14p-CE-8] High energy optical pulse generations by GaN-based mode lock laser diode and
semiconductor optical amplifier

〇Rintaro Koda¹, Yoshiro Takiguchi¹, Shunsuke Kono¹, Hideki Watanabe¹, Yasunari Hanzawa², Hiroshi Nakajima¹, Masaki Shiozaki², Nobuhiro Sugawara², Noriyuki Futagawa¹, Hironobu Narui¹ (1.Sony Corp., 2.Sony Semiconductor Corp.)

Keywords:GaN,Semiconductor Optical Amplifier,mode-locked laser diode

There exist a number of potential applications utilizing optical pulses, such as high precision nano-processing, orthoptics or 3 dimensional optical storage using nonlinear multiphoton processes. These applications require high peak power optical pulse and they are currently limited in laboratories since they require well developed, but large and expensive solid state laser, such as mode-locked titanium sapphire laser. We have been developing a compact pulse source based on GaN-based devices. In this talk, we will discuss our activities for realization of practical pulse source and some of the latest results.