The 76th JSAP Autumn Meeting, 2015

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Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14p-PA13-1~21] 6.3 Oxide electronics

Mon. Sep 14, 2015 6:30 PM - 8:30 PM PA13 (Event Hall)

6:30 PM - 8:30 PM

[14p-PA13-10] Electrical and Structural Properties of TiO2-δ Thin Film Prepared by Sputtering Using Oxygen Radical

Kinya Kawamura1, Naoya Suzuki1, Takashi Tsuchiya1, Masaki Kobayashi2, Hiroshi Kumigashira2, 〇Tohru Higuchi1 (1.Tokyo Univ. of Sci., 2.KEK)

Keywords:Oxide semiconductor,TiO2,Oxygen radical

We have prepared the TiO2-δ thin film by Rf magnetron sputtering using oxygen radical and characterized its structural and electrical properties. The orientation, carrier density and mobility change by amount of oxygen radical. The Pt/TiO2-δ/Pt with Cross-point structure exhibited good I-V characteristic.