[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-16] Limiting factor of breakdown voltage in AlGaN/GaN HEMT on GaN substrate with off-state breakdown voltage over 2 kV

〇Shinichi Tanabe¹, Noriyuki Watanabe¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

Keywords:GaN