The 76th JSAP Autumn Meeting, 2015

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

Mon. Sep 14, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

1:30 PM - 3:30 PM

[14p-PB2-17] Evaluating the Bistability of Current-Voltage Characteristics of GaN/AlN Resonant Tunneling Diodes

〇Masanori Nagase1, Tokio Takahashi1, Mitsuaki Shimizu1 (1.AIST)

Keywords:resonant tunneling diode,nitride semiconductor,MOVPE