Poster presentation

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

Mon. Sep 14, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[14p-PB2-1] Dependence of the optical gain on the polarization in InGaAs-MSM-PDs

〇takato sato¹, Nishio Yui¹, Hirayama Naomi¹, Iida Tsutomu¹, Takanashi Yoshifumi¹ (1.TUS)

1:30 PM - 3:30 PM

[14p-PB2-2] Consideration on the Auger recombination lifetime in InAs-PHEMTs

〇Yui Nishio¹, Takato Sato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (1.TUS)

1:30 PM - 3:30 PM

▲ [14p-PB2-3] 494-GHz-f_T high-speed InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

〇AMINE ELMOUTAOUAKIL¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

1:30 PM - 3:30 PM

[14p-PB2-4] Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs

〇Akira Endoh^1,2, Issei Watanabe¹, Akifumi Kasamatsu¹, Tsuyoshi Takahashi², Shoichi Shiba², Yasuhiro Nakasha², Taisuke Iwai², Takashi Mimura^1,2 (1.National Inst. of Info. and Com. Tech., 2.Fujitsu Laboratories Ltd.)

1:30 PM - 3:30 PM

[14p-PB2-5] Direct growth of graphene on a GaN surface by thermal CVD

〇Takayoshi Enomoto¹, Matusima Yusuke¹, Ueno Kazuyoshi^1,2 (1.Shibaura Inst. Tech., 2.SIT Res Center for Green Innovation)

1:30 PM - 3:30 PM

[14p-PB2-6] Analysis of reaction mechanism in Catalyst-referred etching of GaN surface Dissociative adsorption of water molecule at step/kink site

〇Kohji Inagaki¹, Yoshitada Morikawa¹, Kazuto Yamauchi¹ (1.Osaka Univ.)

1:30 PM - 3:30 PM

[14p-PB2-7] Photoelectrochemical characterization of n-type GaN porous structures for use in photocatalytic water-splitting system

〇Hirofumi Kida¹, Yusuke Kumazaki¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

1:30 PM - 3:30 PM

[14p-PB2-8] Investigation of GaO_x formation process in thermal oxidation of GaN surface

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Mikito Nozaki¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

1:30 PM - 3:30 PM

[14p-PB2-9] Characterization of SiO₂/InAlN Interface Formed by Plasma Enhanced CVD

〇atsushi seino¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ)

1:30 PM - 3:30 PM

[14p-PB2-10] Effect of pretreatment process for surface passivation of AlGaN/GaN devices

〇Masatoshi Shinohara¹, Yutaka Kondo¹, Hiroshi Okada^2,1, Hiroto Sekiguchi¹, Keisuke Yamane¹, Akihiro Wakahara^1,2 (1.Toyohashi Tech, 2.EIIRIS. Toyohashi Tech)

1:30 PM - 3:30 PM

[14p-PB2-11] Trap distribution on MOCVD-grown n-GaN epitaxial wafer on GaN substrate

〇(M2)kazuki miyamoto¹, kouta takabayashi¹, yutaka tokuda¹ (1.Aichi Inst. of Technol.)

1:30 PM - 3:30 PM

[14p-PB2-12] DLTS and MCTS measurements of carbon-doped MOCVD n-GaN

〇(M1)Shougo Ueda¹, Kazuki Miyamoto¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tecnol.)

1:30 PM - 3:30 PM

▲ [14p-PB2-13] Origin of ohmic contact formation on AlGaN/GaN structure grown on GaN substrate

〇Daryoush Zadeh¹, Shinichi Tanabe¹, Noriyuki Watanabe¹, Hideaki Matsuzaki¹ (1.NTT Corporation)

1:30 PM - 3:30 PM

[14p-PB2-14] Temperature dependence of current-voltage characteristics for Ni/low-Mg-doped p-GaN Schottky diodes

〇Toshichika Aoki¹, Kenji Shiojima¹ (1.Univ. of Fukui)

1:30 PM - 3:30 PM

[14p-PB2-15] Mapping of Ag/n-GaN Schottky contacts fabricated by printing of Ag nanoink

〇Masato Shingo¹, Takafumi Ito¹, Tasuku Shigemune², Atsushi Koizumi², Takanori Kojima², Yukiyasu Kashiwagi³, Masashi Saitoh³, Kimihiro Matsukawa³, Yasufumi Fujiwara², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka Univ., 3.Osaka Munic. Tech. Res. Inst.)

1:30 PM - 3:30 PM

[14p-PB2-16] Limiting factor of breakdown voltage in AlGaN/GaN HEMT on GaN substrate with off-state breakdown voltage over 2 kV

〇Shinichi Tanabe¹, Noriyuki Watanabe¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

1:30 PM - 3:30 PM

[14p-PB2-17] Evaluating the Bistability of Current-Voltage Characteristics of GaN/AlN Resonant Tunneling Diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

1:30 PM - 3:30 PM

[14p-PB2-18] Effect of Drain Conductance in Equivalent Circuit Model for GIT Bi-directional Switch

〇Toshihide Ide¹, Mitsuaki Shimizu¹, Xu-Qiang Shen¹, Tatsuo Morita², Nobuyuki Otsuka², Tetsuzo Ueda² (1.AIST ADPERC, 2.Panasonic)

1:30 PM - 3:30 PM

[14p-PB2-19] Lateral current generation in n-AlGaAs/GaAs (001) heterojunction channels by Schottky-barrier gate illumination

〇Takuya Kawazu¹, Takeshi Noda¹, Yoshiki Sakuma¹, Hiroyuki Sakaki^2,1 (1.NIMS, 2.Toyota Tech. Inst.)

1:30 PM - 3:30 PM

[14p-PB2-20] Temperature dependence on frequency dispersion of drain conductance in AlGaN/GaN HEMT

〇Tomotaka Narita¹, Yuki Katayama¹, Keiichi Tamesue¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

1:30 PM - 3:30 PM

[14p-PB2-21] Threshold Voltage fluctuation in Normally-off GaN based transistor by selective area growth technique

〇Keita Inoue¹, Tomotaka Narita¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

Oral presentation

[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

Tue. Sep 15, 2015 9:00 AM - 12:30 PM 4C (432)

座長:牧山剛三(富士通研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[15a-4C-1] Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures

〇Aki Sasakura¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

9:15 AM - 9:30 AM

[15a-4C-2] Dependence of pattern size on reduction of contact resistance of ohmic contacts with uneven AlGaN layers for AlGaN/GaN high electron mobility transistors

〇TOMOHIRO SHIMODA¹, Yusuke Takei¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol., 2.Toshiba)

9:30 AM - 9:45 AM

[15a-4C-3] Characterization of TiN gated GaN schottky diodes with Mg₃N₂ insertion

〇Yuta Ikeuchi¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech. IGSSE)

9:45 AM - 10:00 AM

[15a-4C-4] Mapping of n-GaN Schottky contacts degraded by voltage stress

〇Shingo Murase¹, Hiroshi Ohta², Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

10:00 AM - 10:15 AM

[15a-4C-5] Mapping of degradation of Au/a-IGZO Schottky cantacts by using scanning internal photoemission microscopy

〇Masato Shingo¹, Kenji Shiojima¹ (1.Univ. of Fukui)

10:15 AM - 10:30 AM

△ [15a-4C-6] Photocurrent of Homoepitaxial n-type GaN Schottky-barrier Diode

〇Takuya Maeda¹, Masaya Okada², Masaki Ueno², Yoshiyuki Yamamoto², Masahiro Horita³, Jun Suda³ (1.Kyoto Univ., 2.Sumitomo Electric Industries,Ltd., 3.Dept. of Electron. Sci&Eng.,Kyoto Univ.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [15a-4C-7] Analyses of photoanodized GaN surface in back-side illumination mode

〇Masaaki Edamoto¹, Yusuke Kumazaki¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE,Hokkaido Univ.)

11:00 AM - 11:15 AM

△ [15a-4C-8] Effect of High-Pressure Water Vapor Annealing for GaN MIS Interface Characteristics

〇Koji Yoshitsugu¹, Masahiro Horita², Yuki Tada¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Kyoto Univ.)

11:15 AM - 11:30 AM

[15a-4C-9] Microscopic evaluation of Mg-ion-implanted GaN layers

〇YUSUKE SAIJO¹, HIROHUMI TSUGE¹, SHUGEKI KATO¹, NISHIMURA TOMOAKI¹, TOMOYOSHI MISHIMA¹, TOHRU NAKAMURA¹ (1.Hosei Univ.)

11:30 AM - 11:45 AM

[15a-4C-10] Investigation of suitable deposition methods of SiNx for p-GaN

〇Ikumi Oda¹, Naoki Kaneda², Seira Yamaguchi³, Keisuke Ohdaira³, Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Quantum Spread, 3.JAIST)

11:45 AM - 12:00 PM

[15a-4C-11] Improved Current Collapse by O2 plasma treatment in AlGaN/GaN HEMTs with GaN cap layer

〇Satoshi Yoshida¹, Yoshiki Sakaida, Asubar Joel¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

12:00 PM - 12:15 PM

[15a-4C-12] Estimation of ALD-Al₂O₃/AlGaN interface with post-deposition annealing by X-ray photoelectron spectroscopy using synchrotron radiation

〇Toshiharu Kubo¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Naogya Inst.)

12:15 PM - 12:30 PM

[15a-4C-13] GaN-MOSFET characteristics with SiO₂ formed by plasma CVD

〇Katsunori Ueno¹, Shinya Takashima¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric Co., 2.Univ. of Yamanashi)

Oral presentation

[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

Tue. Sep 15, 2015 2:00 PM - 5:45 PM 4C (432)

座長:塩島謙次(福井大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[15p-4C-1] Electrical properties of AlGaN/GaN MOS-HEMT with AlON gate insulators

〇Ryohei Asahara¹, Joyo Ito¹, Mikito Nozaki¹, Takahiro Yamada¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

2:15 PM - 2:30 PM

[15p-4C-2] Analysis of carrier capture and emission in AlGaN/GaN HEMT with bias-controllable filed plate

〇Suguru Mase¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

2:30 PM - 2:45 PM

[15p-4C-3] High Breakdown Voltage AlGaN/GaN HEMTs on Free-Standing GaN Substrate

〇(M1)JIEHONG NG¹, T. Asubar Joel¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

2:45 PM - 3:00 PM

[15p-4C-4] Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs

〇Yuichi Minoura¹, Naoya Okamoto¹, Toshihiro Ohki¹, Shiro Ozaki¹, Kozo Makiyama¹, Yoichi Kamada¹, Keiji Watanabe¹ (1.Fujitsu Labs.)

3:00 PM - 3:15 PM

[15p-4C-5] Reduction of gate leakage current in AlGaN/GaN HEMTs by controlling cap/barrier interface

〇Atsushi Yamada¹, Junji Kotani¹, Tetsuro Ishiguro¹, Shuichi Tomabechi¹, Norikazu Nakamura¹, Keiji Watanabe¹ (1.Fujitsu Labs.)

3:15 PM - 3:30 PM

[15p-4C-6] InAlN/GaN HEMTs with 110-GHz f_T using a low gate capacitance Y-gate process by an i-line stepper

〇Hiroyuki Ichikawa¹, Isao Makabe¹, Tsuyoshi Kouchi¹, Ken Nakata¹, Kazutaka Inoue¹ (1.Sumitomo Electric Industries, Ltd.)

3:30 PM - 3:45 PM

[15p-4C-7] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs (IV)

〇Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (1.NICT, 2.Fujitsu Lab.)

Break （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[15p-4C-8] Diode Operation in Normally-off GaN HEMT with High Controllability of Threshold Voltage

〇TAKAYA NAGAI¹, Naoki Kato¹, Tomotaka Narita¹, Yamato Osada², Ryuichiro Kamimura², Kenji Itou³, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech., 2.ULVAC, 3.Kanazawa Inst. of Tech.)

4:15 PM - 4:30 PM

[15p-4C-9] Temperature Characteristics in δ-doped GaN Cap/AlGaN/GaN Heterostrucutre

〇(M1)naoki kato¹, Takaya Nagai¹, Akio Wakejima¹, Takashi Egawa¹, Yamato Osada², Ryuichiro Kamimura² (1.Nagoya Inst. of Tech, 2.ULVAC)

4:30 PM - 4:45 PM

[15p-4C-10] Electrical properties of p-Si/n-GaN junctions by surface activated bonding

〇(M1)takuya nishimura¹, Jianbo Liang¹, Noriyuki Watanabe², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.NTT Device Technology Labs.,NTT Corp)

4:45 PM - 5:00 PM

[15p-4C-11] Direct observation of temperature distribution in transferred AlGaN/GaN HEMTs on a copper plate by micro-Raman spectroscopy

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

5:00 PM - 5:15 PM

[15p-4C-12] Electrical characteristics of GaAs/GaN junctions by using surface-activated bonding

〇(M1)shoji yamajo¹, Jianbo Liang¹, Noriyuki Watanabe², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.NTT Device Technology Laboratories)

5:15 PM - 5:30 PM

[15p-4C-13] Analysis of electron mobility in AlGaN cannel 2DEG heterostructures

〇Makoto Miyoshi¹, Takashi Egawa¹ (1.Nagoya Inst. Tech.)

5:30 PM - 5:45 PM

[15p-4C-14] Performance Prediction of InAlN/AlGaN HFETs for Power Device Application

〇Tatsuya Tsutsumi¹, Nishino Gosuke¹, Joseph Freedsman¹, Miyoshi Makoto¹, Egawa Takashi¹ (1.Nagoya Inst.)

Oral presentation

[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 4C (432)

座長:東脇正高(NICT)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-4C-1] Evaluation of annealing on electrical properties of GaAs/GaAs bonding interfaces

〇Li Chai¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

9:15 AM - 9:30 AM

[16a-4C-2] Fabrication and characterization of GaAs/4H-SiC heterojunction using low temperature bonding

〇(M1)SAE SHIMIZU¹, JIANBO LIANG¹, MANABU ARAI², NAOTERU SHIGEKAWA¹ (1.Osaka City Univ., 2.New Japan Radio Co., Ltd.)

9:30 AM - 9:45 AM

△ [16a-4C-3] AlAs/InGaAs double barrier p-i-n junction diode for Superlattice FET

〇Atsushi Yukimachi¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)

9:45 AM - 10:00 AM

[16a-4C-4] An initial failure analysis of the low breakdown voltage of GaN p-n diodes fabricated on free-standing GaN substrates (1)

〇FUMIMASA HORIKIRI¹, Yoshinobu Narita¹, Takehiro Yoshida¹, Hiroshi Ohta², Tomoyoshi Mishima², Tohru Nakamura² (1.Sciocs, 2.Hosei Univ.)

10:00 AM - 10:15 AM

[16a-4C-5] An initial failure analysis of the low breakdown voltage of GaN p-n diodes fabricated on free-standing GaN substrates (2)

〇Yoshinobu Narita¹, Fumimasa Horikiri¹, Takehiro Yoshida¹, Hiroshi Ohta², Tomoyoshi Mishima², Tohru Nakamura² (1.Sciocs, 2.Hosei Univ.)

10:15 AM - 10:30 AM

[16a-4C-6] 4.7 kV breakdown voltage GaN p-n diodes fabricated on free-standing GaN substrates

Hiroshi Ohta¹, Naoki Kaneda², Fumimasa Horikiri³, Yoshimobu Narita³, Takehiro Yoshida³, 〇Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hoesi Univ., 2.Quantum Spread, 3.Sciocs)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[16a-4C-7] Forward current characteristics on sizes of mesa in vertical GaN p-n diodes

〇sho kanazawa¹, Hiroshi Ohta¹, Naoki Kaneda², Fumimasa Horikiri³, Yoshinobu Narita³, Takehiro Yoshida³, Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Quantum Spread, 3.Sciocs)

11:00 AM - 11:15 AM

△ [16a-4C-8] Steady State Photo Capacitance Spectroscopy in Gallium Nitride Grown via MOHVPE

〇Manato Deki¹, Zheng Ye¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.A.R.C)

11:15 AM - 11:30 AM

[16a-4C-9] Hall-effect measurement of lightly-doped p-type homoepitaxial GaN

〇Masahiro Horita¹, Shinya Takashima², Ryo Tanaka², Katsunori Ueno², Masaharu Edo², Jun Suda¹ (1.Kyoto Univ., 2.Fuji Electric)

11:30 AM - 11:45 AM

[16a-4C-10] Relationship between AlN layer and vertical breakdown voltage
of AlGaN/GaN HEMT on Si substrate

〇KAZUHIRO ITOU¹, YUYA YAMAOKA^1,2, TAKASHI EGAWA¹, AKINORI UBUKATA², TOSHIYA TABUTI², KOH MATSUMOTO² (1.Nagoya Inst, 2.Taiyo Nissan)

11:45 AM - 12:00 PM

[16a-4C-11] AlGaN/GaN HEMT Properties on 200mm Si Wafer by Fast Rotating Single-Wafer MOCVD

〇Kiyotaka Miyano¹, Yasushi Iyechika¹, Hideshi Takahashi¹, Yusuke Sato¹, Shinichi Mitani¹ (1.Nuflare Technology)

Oral presentation

[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

Wed. Sep 16, 2015 1:30 PM - 3:45 PM 4C (432)

座長:末光哲也(東北大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

△ [16p-4C-1] Mapping of Si/SiC hetero p-n junctions by using scanning internal photoemission microscopy

〇Masato Shingo¹, Jianbo Liang², Naoteru Shigekawa², Manabu Arai³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka City Univ., 3.New Japan Radio)

1:45 PM - 2:00 PM

△ [16p-4C-2] Thinning of SiC Wafer by sub-atmospheric pressure plasma etching with SF₆

〇(M1)koki tajiri¹, yuki inoue¹, yasuhisa sano¹, satoshi matsuyama¹, kazuto yamauchi¹ (1.Osaka Univ.)

2:00 PM - 2:15 PM

[16p-4C-3] First-plinciple calculations for a mechanism of carbon annihilation during the SiC oxidation

〇Yuichiro Matsushita¹, Atsushi Oshiyama¹ (1.The Univ. of Tokyo)

2:15 PM - 2:30 PM

△ [16p-4C-4] Fabrication of diamond field effect transistor using NO₂ molecular doping

〇(M1)Yuta Koga¹, Kazuya Harada¹, Kenji Hanada¹, Toshiyuki Oishi¹, Makoto Kasu¹ (1.Saga Univ.)

2:30 PM - 2:45 PM

△ [16p-4C-5] Homoepitaxial Growth of Si-Doped Thick (001) β-Ga₂O₃ Layers by HVPE

〇Kazushiro Nomura¹, Ken Goto^1,2, Kohei Sasaki^2,3, Quang Tu Thieu^1,4, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Masataka Higashiwaki³, Akito Kuramata², Shigenobu Yamakoshi², Bo Monemar^4,5, Akinori Koukitu¹ (1.TUAT, 2.Tamura Corp., 3.NICT, 4.TUAT GIRO, 5.Linkoping Univ)

2:45 PM - 3:00 PM

[16p-4C-6] Ga₂O₃ Schottky Barrier Diodes with Drift Layers Grown by HVPE

〇Masataka Higashiwaki¹, Kohei Sasaki^2,1, Keita Konishi¹, Ken Goto², Kazushiro Nomura³, Quang Tu Thieu⁴, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata², Shigenobu Yamakoshi² (1.NICT, 2.Tamura Corp., 3.Tokyo Univ. of Agri. & Tech., 4.TUAT GIRO, 5.Linkoping Univ.)

3:00 PM - 3:15 PM

△ [16p-4C-7] Temperature-Dependent Device Characteristics of HVPE-Grown Ga₂O₃ Schottky Barrier Diodes

〇Keita Konishi¹, Kohei Sasaki^2,1, Ken Goto^2,3, Kazushiro Nomura³, Quang Tu Thieu^3,4, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp., 3.TUAT, 4.TUAT GIRO, 5.Linkoping Univ.)

3:15 PM - 3:30 PM

[16p-4C-8] β-Ga₂O₃ Schottky Barrier Diode with Field Plate Edge Termination

〇Kohei Sasaki^1,2, Masataka Higashiwaki², Ken Goto¹, Kazushiro Nomura³, Quang Tu Thieu⁴, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp., 2.NICT, 3.Tokyo Univ. of Agri. & Tech., 4.TUAT GIRO, 5.Linkoping Univ.)

3:30 PM - 3:45 PM

▲ [16p-4C-9] Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors

〇ManHoi Wong¹, Kohei Sasaki^2,1, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

Sessions

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

▲ [14p-PB2-3] 494-GHz-fT high-speed InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well

▲ [14p-PB2-13] Origin of ohmic contact formation on AlGaN/GaN structure grown on GaN substrate

[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

△ [15a-4C-6] Photocurrent of Homoepitaxial n-type GaN Schottky-barrier Diode

△ [15a-4C-7] Analyses of photoanodized GaN surface in back-side illumination mode

△ [15a-4C-8] Effect of High-Pressure Water Vapor Annealing for GaN MIS Interface Characteristics

[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

△ [16a-4C-3] AlAs/InGaAs double barrier p-i-n junction diode for Superlattice FET

△ [16a-4C-8] Steady State Photo Capacitance Spectroscopy in Gallium Nitride Grown via MOHVPE

[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

△ [16p-4C-1] Mapping of Si/SiC hetero p-n junctions by using scanning internal photoemission microscopy

△ [16p-4C-2] Thinning of SiC Wafer by sub-atmospheric pressure plasma etching with SF6

△ [16p-4C-4] Fabrication of diamond field effect transistor using NO2 molecular doping

△ [16p-4C-5] Homoepitaxial Growth of Si-Doped Thick (001) β-Ga2O3 Layers by HVPE

△ [16p-4C-7] Temperature-Dependent Device Characteristics of HVPE-Grown Ga2O3 Schottky Barrier Diodes

▲ [16p-4C-9] Molecular beam epitaxy of undoped β-Ga2O3 (010) for Si-ion-implanted field effect transistors

Authentication

▲ [14p-PB2-3] 494-GHz-f_T high-speed InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

△ [16p-4C-2] Thinning of SiC Wafer by sub-atmospheric pressure plasma etching with SF₆

△ [16p-4C-4] Fabrication of diamond field effect transistor using NO₂ molecular doping

△ [16p-4C-5] Homoepitaxial Growth of Si-Doped Thick (001) β-Ga₂O₃ Layers by HVPE

△ [16p-4C-7] Temperature-Dependent Device Characteristics of HVPE-Grown Ga₂O₃ Schottky Barrier Diodes

▲ [16p-4C-9] Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors