[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-8] Investigation of GaO_x formation process in thermal oxidation of GaN surface

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Mikito Nozaki¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

Keywords:GaN,Thermal oxidation