[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-10] Effect of pretreatment process for surface passivation of AlGaN/GaN devices

〇Masatoshi Shinohara¹, Yutaka Kondo¹, Hiroshi Okada^2,1, Hiroto Sekiguchi¹, Keisuke Yamane¹, Akihiro Wakahara^1,2 (1.Toyohashi Tech, 2.EIIRIS. Toyohashi Tech)

Keywords:AlGaN/GaN devices,surface passivation