[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-11] Trap distribution on MOCVD-grown n-GaN epitaxial wafer on GaN substrate

〇(M2)kazuki miyamoto¹, kouta takabayashi¹, yutaka tokuda¹ (1.Aichi Inst. of Technol.)

Keywords:GaN

We characterize distribution of traps E1 (E_c-0.21 eV), E3 (E_c-0.57 eV) and H1 (E_v+0.86 eV) which are commonly observed in MOCVD n-GaN. The sample was 2-inch-diameter n-GaN on GaN. DLTS and MCTS measurements were made for fabricated Schottky diodes. Trap E1 is almost uniform along the radial direction with the concentration of ~1.5x10¹³ cm^-3. On the contrary, trap E3 shows two orders of magnitude variations of trap concentration. Trap E3 has the concentration of 2.5x10¹⁴ cm^-3 at the center and periphery of the wafer with the minimum concentration of around 2x10¹² cm^-3 on the half way from the center to periphery. Distribution of trap H1 will be presented.