[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-12] DLTS and MCTS measurements of carbon-doped MOCVD n-GaN

〇(M1)Shougo Ueda¹, Kazuki Miyamoto¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tecnol.)

Keywords:GaN,Carbon

From DLTS and MCTS measurements, we study the effects of carbon doping on electron trap E3(E_c-0.57 eV) and hole trap H1(E_v+0.86 eV) which are the main traps in MOCVD n-GaN. Samples used were Si-doped n-GaN on n⁺-GaN. Three different carbon doping concentrations were used, that is, 3.6x10¹⁵ cm^-3, 5.5x10¹⁵ cm^-3,8.5x10¹⁵ cm^-3. Ni/Au Schottky diodes were fabricated. It is found that E3 trap concentration decreases from 2.6x10¹⁶ to 3.0x10¹⁵ cm^-3 with carbon concentration, while trap H1 concentration increases from 3.8x10¹⁴ to 9.7x10¹⁵ cm^-3