[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-6] Analysis of reaction mechanism in Catalyst-referred etching of GaN surface Dissociative adsorption of water molecule at step/kink site

〇Kohji Inagaki¹, Yoshitada Morikawa¹, Kazuto Yamauchi¹ (1.Osaka Univ.)

Keywords:GaN,Catalyst Reffered ecthing method,disociative adsorption

Catalyst-referred etching of GaN surface has been proved that it can form surfaces with an atomic level flatness. In this study, dissociative adsorption of a water molecule at surface kink site of 3c-GaN(111) is investigated by means of first-principles reaction barrier analysis. The reaction processes are compared with the results at step site and the flattening mechanism will be presented. In addition to this, analysis about the role of Pt catalyst will be also presented.