[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-4] Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs

〇Akira Endoh^1,2, Issei Watanabe¹, Akifumi Kasamatsu¹, Tsuyoshi Takahashi², Shoichi Shiba², Yasuhiro Nakasha², Taisuke Iwai², Takashi Mimura^1,2 (1.National Inst. of Info. and Com. Tech., 2.Fujitsu Laboratories Ltd.)

Keywords:HEMT,Cryogenic DC and RF characteristics