[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-21] Threshold Voltage fluctuation in Normally-off GaN based transistor by selective area growth technique

〇Keita Inoue¹, Tomotaka Narita¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

Keywords:Normally off,Selective area growth