[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

[16a-4C-10] Relationship between AlN layer and vertical breakdown voltage
of AlGaN/GaN HEMT on Si substrate

〇KAZUHIRO ITOU¹, YUYA YAMAOKA^1,2, TAKASHI EGAWA¹, AKINORI UBUKATA², TOSHIYA TABUTI², KOH MATSUMOTO² (1.Nagoya Inst, 2.Taiyo Nissan)

Keywords:nitride semiconductor,MOCVD,crystal growth