[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

[15p-4C-1] Electrical properties of AlGaN/GaN MOS-HEMT with AlON gate insulators

〇Ryohei Asahara¹, Joyo Ito¹, Mikito Nozaki¹, Takahiro Yamada¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

Keywords:power device,GaN