[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

[15p-4C-2] Analysis of carrier capture and emission in AlGaN/GaN HEMT with bias-controllable filed plate

〇Suguru Mase¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

Keywords:semiconductor,GaN,Field Plate

We analyze carrier emission process in AlGaN/GaN HEMT with independently bias-controllable field plate (CFP) formed between gate and drain electrodes, by evaluating the transient drain current change which occurs by synchronizing the pulse movement of gate drain and the voltage change of CFP. In this report, we observed not only the emission process which we observed in the past but also the transient response of the capture process. In addition, the origin of the carrier capture and emission is suggested to be the interfacial continuous level.