[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

[15p-4C-5] Reduction of gate leakage current in AlGaN/GaN HEMTs by controlling cap/barrier interface

〇Atsushi Yamada¹, Junji Kotani¹, Tetsuro Ishiguro¹, Shuichi Tomabechi¹, Norikazu Nakamura¹, Keiji Watanabe¹ (1.Fujitsu Labs.)

Keywords:GaN,MOCVD,HEMT