[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

[15p-4C-6] InAlN/GaN HEMTs with 110-GHz f_T using a low gate capacitance Y-gate process by an i-line stepper

〇Hiroyuki Ichikawa¹, Isao Makabe¹, Tsuyoshi Kouchi¹, Ken Nakata¹, Kazutaka Inoue¹ (1.Sumitomo Electric Industries, Ltd.)

Keywords:GaN,HEMT,InAlN

We previously developed a Y-gate process with a conventional i-line stepper. The process enabled us to obtain a gate-source capacitance (C_gs) of 0.58pF/mm and a current gain cutoff frequency (f_T) of 70 GHz for InAlN/GaN HEMTs. In this study, we reduced both gate length and over-gate length to decrease C_gs. As a result, f_T of 110 GHz was successfully achieved. This simple and low C_gs process is suitable for low cost production of high speed GaN HEMTs.