[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

[16a-4C-6] 4.7 kV breakdown voltage GaN p-n diodes fabricated on free-standing GaN substrates

Hiroshi Ohta¹, Naoki Kaneda², Fumimasa Horikiri³, Yoshimobu Narita³, Takehiro Yoshida³, 〇Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hoesi Univ., 2.Quantum Spread, 3.Sciocs)

Keywords:GaN,diode,high breakdown voltage

Increased breakdown voltages in vertical GaN p-n diodes fabricated on free-standing GaN substrates are discussed. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages of 4.7 kV combined with low specific differential on-resistance of 2.2 mohm-cm² were achieved.