[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

[16a-4C-5] An initial failure analysis of the low breakdown voltage of GaN p-n diodes fabricated on free-standing GaN substrates (2)

〇Yoshinobu Narita¹, Fumimasa Horikiri¹, Takehiro Yoshida¹, Hiroshi Ohta², Tomoyoshi Mishima², Tohru Nakamura² (1.Sciocs, 2.Hosei Univ.)

Keywords:GaN,diode,failure analysis

Mechanisms of the initial failure and the low breakdown in vertical GaN p-n diodes fabricated on free-standing GaN substrates are discussed.Origin of the pit which cause the initial failure of the low breakdown voltage was found to be particle.These results, by keeping the cleanliness of substrate and reactor so as to prevent particles, formation of pits is suppressed, and seems possible to improve the initial failure of the low breakdown voltage of the p-n diode.