[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

[16a-4C-4] An initial failure analysis of the low breakdown voltage of GaN p-n diodes fabricated on free-standing GaN substrates (1)

〇FUMIMASA HORIKIRI¹, Yoshinobu Narita¹, Takehiro Yoshida¹, Hiroshi Ohta², Tomoyoshi Mishima², Tohru Nakamura² (1.Sciocs, 2.Hosei Univ.)

Keywords:GaN,diode,failure analysis

It was investigated that an initial failure analysis of the low breakdown voltage of GaN p-n diodes fabricated on free-standing GaN substrates. The p-n junction layers, a basic structure of the devices, were grown on by MOVPE on GaN substrates. A few pits were formed in the epi growth process. The p-n diode tip included with the pit showed the low inverse breakdown voltage. The oxygen concentration seems to be high at the bottom of the pit, thus the Schottky junction was formed on the pit. These results provide useful information for decreasing the initial failure of the devices.