[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

[15a-4C-12] Estimation of ALD-Al₂O₃/AlGaN interface with post-deposition annealing by X-ray photoelectron spectroscopy using synchrotron radiation

〇Toshiharu Kubo¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Naogya Inst.)

Keywords:AlGaN/GaN HEMT,insulator,annealing

Chemical states at 5nm thick Al₂O₃ / AlGaN interface after post-deposition annealing (PDA) were studied by X-ray photoelectron spectroscopy (XPS) using synchrotron radiation. The results suggest that the oxygen atoms in Al₂O₃ spread towards the AlGaN layer with increasing the PDA temperature.
The peak shifts of XPS spectra were saturated above 600^oC. It coincides with the result that the crystal structure of Al₂O₃ layer changed largely at a temperature between 600 and 700^oC.