Characterization of TiN gated GaN schottky diodes with Mg<sub>3</sub>N<sub>2</sub> insertion

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Tue. Sep 15, 2015 9:00 AM - 12:30 PM 4C (432)

座長:牧山剛三(富士通研)

9:30 AM - 9:45 AM

〇Yuta Ikeuchi¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech. IGSSE)

Keywords:semiconductor,GaN