[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

[15p-4C-11] Direct observation of temperature distribution in transferred AlGaN/GaN HEMTs on a copper plate by micro-Raman spectroscopy

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

Keywords:AlGaN/GaN,Transfer technique,Micro-Raman Spectroscopy

We transferred AlGaN/GaN HEMTs from sapphire substrate to copper plate by using h-BN release layer and Au-Au thermocompression bonding and found the enhancement of the heat dissipation improved the dc performance. In this study, we observed the temperature distribution in an active HEMT by micro-Raman spectroscopy. The estimated thermal resistance of 11.2 C mm/W was about half of that for the HEMT on sapphire.