[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-18] Effect of Drain Conductance in Equivalent Circuit Model for GIT Bi-directional Switch

〇Toshihide Ide¹, Mitsuaki Shimizu¹, Xu-Qiang Shen¹, Tatsuo Morita², Nobuyuki Otsuka², Tetsuzo Ueda² (1.AIST ADPERC, 2.Panasonic)

Keywords:GaN,Bi-directional Switch,Equivalent Circuit Model