[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-19] Lateral current generation in n-AlGaAs/GaAs (001) heterojunction channels by Schottky-barrier gate illumination

〇Takuya Kawazu¹, Takeshi Noda¹, Yoshiki Sakuma¹, Hiroyuki Sakaki^2,1 (1.NIMS, 2.Toyota Tech. Inst.)

Keywords:Schottky-barrier gate,n-AlGaAs/GaAs heterojunction channel

We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.