[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-1] Solution growth of 4H-SiC bulk crystals with very low dislocation density

〇Katsunori Danno¹, Satoshi Yamaguchi², Hiroyuki Kimoto¹, Kazuaki Sato¹, Takeshi Bessho¹ (1.Toyota Motor Corp., 2.Toyota Central R & D Lab.)

Keywords:semiconductor,Silicon carbide

Solution growth of 4H-SiC bulk crystals with very low-dislocation density was performed. By enlargement of crystal diameter, dislocation free area could be obtained at periphery of the crystal because dislocations in a seed crystal could not propagate to the region. By solution growth on 4H-SiC(1-100), crystals free from threading dislocations were grown. By using the crystal as a seed crystal, very high-quality 4H-SiC could be obtained.