The 76th JSAP Autumn Meeting, 2015

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Sep 14, 2015 4:00 PM - 6:00 PM PB6 (Shirotori Hall)

4:00 PM - 6:00 PM

[14p-PB6-2] Spatial distribution of carrier concentration in n-type 4H-SiC grown by solution method

〇Zhenjiang Wang1, Takahiko Kawaguchi1, Kenta Murayama1, Kenta Aoyagi1, Shunta Harada1, Takenobu Sakai1, Toru Ujihara1 (1.Nagoya Univ.)

Keywords:SiC,Doping,Morphology