[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-2] Spatial distribution of carrier concentration in n-type 4H-SiC grown by solution method

〇Zhenjiang Wang¹, Takahiko Kawaguchi¹, Kenta Murayama¹, Kenta Aoyagi¹, Shunta Harada¹, Takenobu Sakai¹, Toru Ujihara¹ (1.Nagoya Univ.)

Keywords:SiC,Doping,Morphology