[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-5] HAXPES and XRD characterization of Ni-silicide/SiC interface formed by thermal annealing

〇Satoshi Yasuno¹, Tomoyuki Koganezawa¹ (1.JASRI)

Keywords:HAXPES

In this study, we carried out the hard X-ray photoelectron spectroscopy (HAXPES) and X-ray diffraction (XRD) measurement with a two-dimensional (2D) detector to evaluate the chemical states and the crystallinity at the Ni/SiC interface layer with anneal treatment. HAXPES result indicated that no chemical reaction was observed at the as-deposited sample. By contrast, Ni silicide layer was observed at annealed sample, and the graphitic C layer was formed on the outmost surface. In addition, XRD measurement with 2D-detector result showed that the Ni silicide with three-dimensional orientation was grown at the interface.