Investigation on Al2O3,Al6Si2O13 gate insulator for 4H-SiC MISFETs in harsh environment

Hikaru Akase

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Sep 14, 2015 4:00 PM - 6:00 PM PB6 (Shirotori Hall)

4:00 PM - 6:00 PM

[14p-PB6-7] Investigation on Al₂O₃,Al₆Si₂O₁₃ gate insulator for
4H-SiC MISFETs in harsh environment

〇Hikaru Akase¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Milantha de Silva¹, Hirofumi Nagatuma¹, Takamaro Kikkawa¹, Shin-ichiro Kuroki¹ (1.Hiroshima Uni.RNBS, 2.Phenitec)

Keywords:SiC,Al2O3

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Presentation information

[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-7] Investigation on Al2O3,Al6Si2O13 gate insulator for 4H-SiC MISFETs in harsh environment

[14p-PB6-7] Investigation on Al₂O₃,Al₆Si₂O₁₃ gate insulator for
4H-SiC MISFETs in harsh environment