[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-9] A Unified Theory of SiC Thermal Oxidation Mechanism based on the Si and C Emission Model

〇Yasuto Hijikata¹, Ryosuke Asafuji¹ (1.Saitama Univ.)

Keywords:silicon carbide,thermal oxidation,MOS interface

In this presentation, the overall thermal oxidation process of SiC is presented and a unified theory of SiC thermal oxidation model is established. Furthermore, by performing simulations of Si and C interstitial concentration at the oxidation interface, we tried to clarify the formation mechanism of interface state and to optimize the oxidation sequence for reducing the interface state density.