[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-7] SiC wafer etching rate behavior using ClF₃ gas

〇Ken Nakagomi¹, Dairi Yajima¹, Hitoshi Habuka¹, Tomohisa Kato² (1.Yokohama.Nat.Univ., 2.AIST.)

Keywords:SiC wafer,ClF3,Etching

A 50-mm-diameter silicon carbide (SiC) wafer could be etched at a high rate using a chlorine trifluoride (ClF₃) gas. Because the etching rate profile depended on the ClF₃ gas concentration, the ClF₃ gas distribution over the substrate was adjusted by modifying the gas distributor geometry. Its details will be discussed.