The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:原田 俊太(名大)

10:45 AM - 11:00 AM

[15a-1A-7] SiC wafer etching rate behavior using ClF3 gas

〇Ken Nakagomi1, Dairi Yajima1, Hitoshi Habuka1, Tomohisa Kato2 (1.Yokohama.Nat.Univ., 2.AIST.)

Keywords:SiC wafer,ClF3,Etching

A 50-mm-diameter silicon carbide (SiC) wafer could be etched at a high rate using a chlorine trifluoride (ClF3) gas. Because the etching rate profile depended on the ClF3 gas concentration, the ClF3 gas distribution over the substrate was adjusted by modifying the gas distributor geometry. Its details will be discussed.