[15a-1B-1~10] 21.1 Joint Session K

[15a-1B-4] Dependence of Surface Morphology on VI/III Ratio of Ozone-MBE Grown β-Ga₂O₃ Homoepitaxial Films

〇Kohei Sasaki¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp.)

Keywords:Ga2O3,MBE,surface morphology

β-Ga₂O₃ has received a lot of attention as a power device material because of its excellent material properties and ease of mass production. In this study, we researched the dependence of the surface morphology on the VI/III ratio of ozone-MBE grown Ga₂O₃ homoepitaxial films. It was found that the films with smooth surface could be obtained by optimizing the VI/III ratio for each growth temperature.