[15a-1B-1~10] 21.1 Joint Session K

△ [15a-1B-5] Room temperature fabrication of β-Ga₂O₃ epitaxial thin films on NiO-buffered α-Al₂O₃ (0001) by KrF excimer laser annealing

〇(DC)Daishi Shiojiri¹, Daiji Fukuda¹, Hiroki Uchida¹, Shiori Takano¹, Nobuo Tsuchimine², Koji Koyama³, Satoru Kaneko^4,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Inst. of Tech., 2.TOSHIMA Manu. Co., Ltd., 3.Namiki Precision Jewel Co., Ltd., 4.Kanagawa Ind. Tech. Center)

Keywords:gallium oxide,excimer laser annealing,solid-phase crystallization