[15a-1C-1~7] 13.5 Semiconductor devices and related technologies

[15a-1C-5] Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET
by Gate Voltage Modulation

〇Naoto Matsuo¹, Shouhei Nakamura¹, Tadao Takada¹, Akira Heya¹, Kazushige Yamana¹, Tadashi Sato², Shin Yokoyama², Yasuhisa Omura³ (1.Univ Hyogo, 2.Hiroshima Univ, 3.Kansai Univ)

Keywords:Mesoscopic,DNA,Si

Mesoscopic blockade/staircase phenomena of holes in λ-DNA channel bridged between the Si source/drain electrodes, which were fabricated on the SiO₂/Si substrate, were observed at 20 to 200K by applying the gate voltage. It is considered, first, that the DNA/allyl glycidyl ether(AGE), which connects the DNA to the both Si electrodes/Si is the wave function-penetrating-contact, and second, that the potential of the 1-nm-thick AGE dielectric is modulated by the gate voltage. A multi-valued logic circuit by the DNA is expected to perform at liquid nitrogen temperature.