[15a-1C-1~7] 13.5 Semiconductor devices and related technologies

[15a-1C-6] 8-GHz operation of Si tunable-barrier single-electron pumps

〇Gento Yamahata¹, Katsuhiko Nishiguchi¹, Masaya Kataoka², Akira Fujiwara¹ (1.NTT Basic Research Lab., 2.National Physical Lab.)

Keywords:Single electron,Silicon,Current standard

Using a dedicated high-speed measurement system, we have achieved 8-GHz operation of a Si tunable-barrier single-electron pump, in which a high-speed signal is applied to a gate electrode of a Si wire MOSFET to modulate the potential barrier. We will also discuss the frequency dependence of the single-electron transfer accuracy.