The 76th JSAP Autumn Meeting, 2015

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13 Semiconductors » 13.5 Semiconductor devices and related technologies

[15a-1C-1~7] 13.5 Semiconductor devices and related technologies

Tue. Sep 15, 2015 10:00 AM - 11:45 AM 1C (135)

座長:小林 正治(東大)

11:30 AM - 11:45 AM

[15a-1C-7] I-V characteristic of MOS transistor with 1D array of Ge at room temperature

〇(M2)Yuki Chiba1, Yano maasa1, abdelghafar ayman1, Enrico Prati2, Shinada Takahiro3, Tanii Takashi1 (1.Waseda Univ, 2.CNR-IFN, 3.CIES Tohoku Univ.)

Keywords:Single Ion Implantation,Ge-doped MOSFET