Poster presentation

[14a-PB4-1~3] 13.5 Semiconductor devices and related technologies

Mon. Sep 14, 2015 9:30 AM - 11:30 AM PB4 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[14a-PB4-1] Characterization of coupled series-quantum dots

〇Takahumi Uchida¹, Hikaru Satoh¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (1.Hokkaido Univ., 2.NTT BRL.)

9:30 AM - 11:30 AM

[14a-PB4-2] Si/SiGe Hole-Tunneling Asymmetric-Double-Quantum-Well RTD

〇Ayaka Shinkawa¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol.)

9:30 AM - 11:30 AM

[14a-PB4-3] 0-25 GHz 65 nm CMOS Differential Double Pole Four Throw Switching Matrix

〇Kazuki Shinya¹, Mitudenn Wang¹, Azhari Afreen¹, Takamaro Kikkawa¹ (1.hiroshima Univ)

Oral presentation

[15a-1C-1~7] 13.5 Semiconductor devices and related technologies

Tue. Sep 15, 2015 10:00 AM - 11:45 AM 1C (135)

座長:小林正治(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

△ [15a-1C-1] Hole transport properties in silicon double quantum dots

〇Kazuma Iwasaki^1,2, Tetsuo Kodera², Shunri Oda^1,2 (1.QNERC, 2.Dept. of Phys. Electron)

10:15 AM - 10:30 AM

[15a-1C-2] Characterization of physically-defined double quantum dots on highly-doped silicon substrate

〇Yu Yamaoka¹, Shunri Oda¹, Tetsuo Kodera¹ (1.Tokyo Tech.)

10:30 AM - 10:45 AM

△ [15a-1C-3] Characterization of a multiple quantum dot device based on Si-MOS structure

〇TAKUMU HONDA¹, JUN YONEDA², KENTA TAKEDA², TETSUO KODERA^4,5, SEIGO TARUCHA^2,3,5, SHUNRI ODA¹ (1.QNERC-Tokyo Tech., 2.RIKEN, 3.The Univ. of Tokyo, 4.Tokyo Tech, 5.NanoQuine-The Univ. of Tokyo)

10:45 AM - 11:00 AM

△ [15a-1C-4] Single Electron Transportation by Each Side-Gates in Silicon Triple Quantum Dots

〇Soichiro Hiraoka^1,2, Kosuke Horibe^1,2, Tetsuo Kodera², Shunri Oda^1,2 (1.QNERC,Titech, 2.Dept. of Phys. Electron.,Titech)

11:00 AM - 11:15 AM

[15a-1C-5] Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET
by Gate Voltage Modulation

〇Naoto Matsuo¹, Shouhei Nakamura¹, Tadao Takada¹, Akira Heya¹, Kazushige Yamana¹, Tadashi Sato², Shin Yokoyama², Yasuhisa Omura³ (1.Univ Hyogo, 2.Hiroshima Univ, 3.Kansai Univ)

11:15 AM - 11:30 AM

[15a-1C-6] 8-GHz operation of Si tunable-barrier single-electron pumps

〇Gento Yamahata¹, Katsuhiko Nishiguchi¹, Masaya Kataoka², Akira Fujiwara¹ (1.NTT Basic Research Lab., 2.National Physical Lab.)

11:30 AM - 11:45 AM

[15a-1C-7] I-V characteristic of MOS transistor with 1D array of Ge at room temperature

〇(M2)Yuki Chiba¹, Yano maasa¹, abdelghafar ayman¹, Enrico Prati², Shinada Takahiro³, Tanii Takashi¹ (1.Waseda Univ, 2.CNR-IFN, 3.CIES Tohoku Univ.)

Oral presentation

[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

Tue. Sep 15, 2015 1:15 PM - 6:00 PM 1C (135)

座長:齋藤真澄(東芝),入沢寿史(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[15p-1C-1] Substrate Bias Dependence of RTN Amplitude Statistics in FD-SOTB nMOSFET

〇Kyungmin Jang¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS The Univ. of Tokyo)

1:30 PM - 1:45 PM

▼ [15p-1C-2] Impact of Random Telegraph Noise (RTN) on Write Stability in Silicon-on-thin-BOX (SOTB) SRAM Cells in Sub-0.4V Regime

〇(D)Hao Qiu¹, Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Institute of Industrial Science, The University of Tokyo, 2.LEAP)

1:45 PM - 2:00 PM

[15p-1C-3] Dependence of Soft Errors in SOI-SRAM on Distribution of Energy Deposition by High-Energy Heavy-Ion Incidence

〇Satoshi Abo¹, Masatoshi Hazama¹, Fujio Wakaya¹, Shinobu Onoda^1,2, Takahiro Makino², Takeshi Ohshima², Hidekazu Oda³, Mikio Takai¹ (1.Osaka Univ., 2.JAEA, 3.Renesas Electronics)

2:00 PM - 2:15 PM

[15p-1C-4] Quantitative comparison of power-gating architectures for nonvolatile SRAM

〇Yusuke Shuto¹, Shuu'ichirou Yamamoto¹, Satoshi Sugahara¹ (1.ISEL, Tokyo Inst. Tech.)

2:15 PM - 2:30 PM

[15p-1C-5] Multi-value memory operation at RESET in a Cu-MoO_x-Al resistance change memory fabricated on a MOSFET

〇Kazumasa Tomizaki¹, Hideyuki Ando¹, Takashi Morie¹, Takahiro Hiroi², Akitoshi Nakane², Atsushi Fukuchi², Masashi Arita², Yasuo Takahashi² (1.Kyushu Inst. Tech., 2.Hokkaido Univ.)

2:30 PM - 2:45 PM

△ [15p-1C-6] Switching and Magnetresistance Characteristics Observed in the ReRAM Device with Ferromagnetic Electrode

〇(B)Hayato Yoshida¹ (1.Kansai University)

2:45 PM - 3:00 PM

[15p-1C-7] Threshold Voltage and Current Variability Due to Quantum Confinement Effect in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm

〇Tomoko Mizutani¹, Yuma Tanahashi¹, Ryota Suzuki¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

3:00 PM - 3:15 PM

[15p-1C-8] Fabrication and Comparative Study of Polycrystalline and Crystalline Silicon Channel FinFET CMOS Inverters

〇Yongxun Liu¹, Youhei Hori¹, Morifumi Ono¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Shinichi Ouchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Wataru Mizubayashi¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (1.AIST)

3:15 PM - 3:30 PM

[15p-1C-9] GIDL of FinFETs caused by extension ion implantation

〇Takashi Matsukawa¹, Yongxun Liu¹, Shintaro Otsuka¹, Takahiro Mori¹, Yukinori Morita¹, Shinichi O'uchi¹, Hiroshi Fuketa¹, Shinji Migita¹, Meishoku Masahara¹ (1.AIST)

3:30 PM - 3:45 PM

[15p-1C-10] Mobility on Junctionless Nanowire FETs

〇Akiko Ueda¹, Mathieu Luisier², Nobuyuki Sano¹ (1.Univ. Tsukuba, 2.ETH)

Break （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[15p-1C-11] An Application of Laser Annealing Process in Low-Voltage Power MOSFETs

〇YI CHEN¹, Tatsuya Okada¹, Takashi NOGUCHI¹, Fulvio MAZZAMUTO², Karim HUET² (1.University of the Ryukyus, 2.SCREEN Semiconductor Solutions)

4:15 PM - 4:30 PM

[15p-1C-12] Effect of Atomic Hydrogen Annealing to Poly-Ge TFT

〇Akira Heya¹, Hirano Shota¹, Matsuo Naoto¹ (1.Univ. of Hyogo)

4:30 PM - 4:45 PM

[15p-1C-13] Electrical charactarization of thin InSb layer for monolithic 3D-IC

〇(M1)Masahiro Takahashi^1,2, Sachie Fujikawa¹, Hiroki Fujishiro¹, Toshifumi Irisawa², Junji Tominaga², Tatsuro Maeda^1,2 (1.Tokyo Univ. of Science, 2.AIST)

4:45 PM - 5:00 PM

[15p-1C-14] Improvement of crystallinity of sputtered-MoS₂thin film by lowering pressure for sulfur-powder annealing

〇(M1)kentarou matsuura¹, Takumi Ohashi¹, Seiya Ishihara², Naomi Sawamoto², Yusuke Hibino², Suda Kohei², Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyo Tech., 2.Meiji Univ.)

5:00 PM - 5:15 PM

[15p-1C-15] Effect of temperature and gate bias tuning on phase transition of 1T-TaS₂

〇Shigehisa Shibayama^1,2, Nan Fang¹, Takeaki Yajima¹, Tomonori Nishimura¹, Kousuke Nagashio¹, Akira Toriumi¹ (1.The Univ. of Tokyo, 2.JSPS research fellow)

5:15 PM - 5:30 PM

[15p-1C-16] Gate Modulation of VO₂ Channel Transistors as a Function of Channel Thickness

〇Takeaki Yajima^1,2, Tomonori Nishimura^1,2, Akira Toriumi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

5:30 PM - 5:45 PM

[15p-1C-17] Experimental study on 2D-Si based semiconductor(Ⅱ)

〇yoshiki nagamine¹, yuusuke omata¹, takasi aoki¹, tomohisa mizuno¹, toshiyuki samezima² (1.Kanagawa Univ., 2.Toukyounoukou UniV.)

5:45 PM - 6:00 PM

△ [15p-1C-18] Device Simulation of C-H Diamond MOSFETs using 2DHG formed by 2D Fixed Negative Charge

〇Masanobu SHIBATA¹, Dechen XU¹, Yuya KITABAYASHI¹, Atsushi HIRAIWA¹, Hiroshi KAWARADA¹ (1.Waseda Univ.)

Oral presentation

[16a-1C-1~11] 13.5 Semiconductor devices and related technologies

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 1C (135)

座長:太田裕之(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [16a-1C-1] [Young Scientist Presentation Award Speech] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs

〇Minsoo Kim^1,2, Yuki K. Wakabayashi¹, Ryosho Nakane¹, Masafumi Yokoyama¹, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

9:15 AM - 9:30 AM

[16a-1C-2] Introduction of SiGe/Si Hetero-Tunnel-Junction into Multilayer Tunnel FinFETs

〇Yukinori Morita¹, Koichi Fukuda¹, Takahiro Mori¹, Wataru Mizubayashi¹, Shinji Migita¹, Kazuhiko Endo¹, Shin-ichi O'uchi¹, Yongxun Liu¹, Meishoku Masahara¹, Takashi Matsukawa¹, Hiroyuki Ota¹ (1.AIST)

9:30 AM - 9:45 AM

[16a-1C-3] Numerical Study about Scaling Immunity of Schottky Barrier Tunneling FET

〇TAIYU XU¹, Shuichiro Hashimoto¹, Kohei Takei¹, Jing Sun¹, Shuhei Asada¹, Xu Zhang¹, Takanobu Watanabe¹ (1.Waseda Univ.)

9:45 AM - 10:00 AM

[16a-1C-4] Dopant-Induced Interband Tunneling Current Enhancement

〇Michiharu Tabe¹, N. Tan H.¹, D. Moraru², L. T. Anh³, M. Manoharan³, T. Mizuno¹, H. Mizuta^3,4 (1.RIE Shizuoka Univ., 2.Shizuoka Univ., 3.JAIST, 4.Univ. of Southampton)

10:00 AM - 10:15 AM

△ [16a-1C-5] InGaAs-OI TFET on Si Fabricated by Direct Wafer Bonding Technology

〇(M2)DAEHWAN AHN^1,2, MITSURU TAKENAKA^1,2, SHINICHI TAKAGI^1,2 (1.The Univ. of Tokyo, 2.JST CREST)

10:15 AM - 10:30 AM

△ [16a-1C-6] Performance degradation caused by Dit in GaAsSb/InGaAs Double-Gate Vertical Tunnel FETs

〇shinjiro iwata¹, Kazumi Ohashi¹, Seiko Netsu¹, Koichi Fukuda², Yasuyuki Miyamoto¹ (1.Tokyo Tech., 2.AIST.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

▲ [16a-1C-7] On the Device Design for Steep Slope Negative Capacitance FET (NCFET) Toward Sub-0.2V operation

〇Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, The Univ. of Tokyo)

11:00 AM - 11:15 AM

[16a-1C-8] Noise Analysis of Nanoscale III-V HEMTs

〇Takuto Takahashi¹, Shota Hatsushiba¹, Sachie fujikawa¹, Hiroki Fujishiro¹ (1.TokyoUniv Science)

11:15 AM - 11:30 AM

[16a-1C-9] Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain

〇(M2)haruki kinoshita¹, Toru Kanazawa¹, Seiko Netsu¹, Yuichi Mishima¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech)

11:30 AM - 11:45 AM

△ [16a-1C-10] 1.5-μm-band Infrared Photo-detection of InGaAs Microdisks on Si by Selective-area MOVPE

〇Toma Watanabe¹, Yoshiaki Nakano¹, Masakazu Sugiyama¹ (1.Univ. Tokyo)

11:45 AM - 12:00 PM

△ [16a-1C-11] Free Carrier Dependent Electron and Phonon Properties in Germanium

〇Shoichi Kabuyanagi^1,2, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.Univ. of Tokyo, 2.JSPS Research Fellow)

Sessions

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[14a-PB4-1~3] 13.5 Semiconductor devices and related technologies

[15a-1C-1~7] 13.5 Semiconductor devices and related technologies

△ [15a-1C-1] Hole transport properties in silicon double quantum dots

△ [15a-1C-3] Characterization of a multiple quantum dot device based on Si-MOS structure

△ [15a-1C-4] Single Electron Transportation by Each Side-Gates in Silicon Triple Quantum Dots

[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

▼ [15p-1C-2] Impact of Random Telegraph Noise (RTN) on Write Stability in Silicon-on-thin-BOX (SOTB) SRAM Cells in Sub-0.4V Regime

△ [15p-1C-6] Switching and Magnetresistance Characteristics Observed in the ReRAM Device with Ferromagnetic Electrode

△ [15p-1C-18] Device Simulation of C-H Diamond MOSFETs using 2DHG formed by 2D Fixed Negative Charge

[16a-1C-1~11] 13.5 Semiconductor devices and related technologies

▲ [16a-1C-1] [Young Scientist Presentation Award Speech] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs

△ [16a-1C-5] InGaAs-OI TFET on Si Fabricated by Direct Wafer Bonding Technology

△ [16a-1C-6] Performance degradation caused by Dit in GaAsSb/InGaAs Double-Gate Vertical Tunnel FETs

▲ [16a-1C-7] On the Device Design for Steep Slope Negative Capacitance FET (NCFET) Toward Sub-0.2V operation

△ [16a-1C-10] 1.5-μm-band Infrared Photo-detection of InGaAs Microdisks on Si by Selective-area MOVPE

△ [16a-1C-11] Free Carrier Dependent Electron and Phonon Properties in Germanium

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