[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

[15p-1C-9] GIDL of FinFETs caused by extension ion implantation

〇Takashi Matsukawa¹, Yongxun Liu¹, Shintaro Otsuka¹, Takahiro Mori¹, Yukinori Morita¹, Shinichi O'uchi¹, Hiroshi Fuketa¹, Shinji Migita¹, Meishoku Masahara¹ (1.AIST)

Keywords:FinFET,GIDL,ion implantation

Influence of extension doping condition on gate induced drain leakage (GIDL) has been investigated to optimize FinFETs for ultra-low-power (ULP) application. Increased GIDL for smaller fin thickness is recognized. This suggests that the residual defects due to extension doping increase the GIDL, and its control is key to realize ULP implementation of the FinFETs.