[15p-1C-1~18] 13.5 デバイス／集積化技術

▼ [15p-1C-2] Impact of Random Telegraph Noise (RTN) on Write Stability in Silicon-on-thin-BOX (SOTB) SRAM Cells in Sub-0.4V Regime

〇(D)Hao Qiu¹, Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Institute of Industrial Science, The University of Tokyo, 2.LEAP)

キーワード：random telegraph noise,SRAM,low supply voltage

Impact of random telegraph noise (RTN) on write stability of silicon-on-thin-BOX (SOTB) SRAM cells is investigated in sub-0.4V regime. Write N-curve is selected as the metric characterizing SRAM cells' write stability. A statistical model is proposed to calculate impact of RTN on fail bit rate (FBR). It is found that, different from at high V_DD, FBR is largely degraded by RTN in sub-0.4V regime and special care is suggested to be taken for RTN in SRAM design.