The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

Tue. Sep 15, 2015 1:15 PM - 6:00 PM 1C (135)

座長:齋藤 真澄(東芝),入沢 寿史(産総研)

4:45 PM - 5:00 PM

[15p-1C-14] Improvement of crystallinity of sputtered-MoS2 thin film by lowering pressure for sulfur-powder annealing

〇(M1)kentarou matsuura1, Takumi Ohashi1, Seiya Ishihara2, Naomi Sawamoto2, Yusuke Hibino2, Suda Kohei2, Kuniyuki Kakushima1, Kazuo Tsutsui1, Atsushi Ogura2, Hitoshi Wakabayashi1 (1.Tokyo Tech., 2.Meiji Univ.)

Keywords:molybdenum disulfide,sputtering method,sulfur-powder annealing