[15a-1E-1~10] 3.13 Semiconductor optical devices

[15a-1E-5] Temporal and temperature dependences of transient dark count in APD

〇Makoto Akiba¹, Kenji Tsujino² (1.NICT, 2.TWMU)

Keywords:avalanche photodiode,dark count rate,high electric field

In a linear mode avalanche photodiode (APD), we have observed a transient dark count rate that exhibits a power low temporal dependence and increases with decreasing temperature. We successfully explained the behavior by using a quantum model for phonon-assisted tunnel emission for detrapping carriers at the multiplication region where the electric field varies with position along the pn junction of the APD. The theory can apply power low behaviors of afterpulsing.