[15a-2L-1~12] 6.1 Ferroelectric thin films

[15a-2L-3] Fabrication of Highly {110}-oriented Ba(Ce,Y)O₃ Perovskite Thin Films by RF-magnetron Sputtering Method

Tomoya Sato¹, Daichi Ichinose², Hiroshi Funakubo², 〇Kiyoshi Uchiyama¹ (1.NIT, Tsuruoka, 2.Tokyo Inst. Tech.)

Keywords:Perovskite thin films,{110}-orientation,seed layer

A highly {110}-oriented Ba(Ce,Y)O₃ perovskite thin film was successfully deposited on (111)Pt/SiO₂/Si substrate without using any buffer layers. We consider this film can be used as a seed layer for depositing {110}-orientated perovskite thin films to modify their ferroelectric properties by using anisotropy of properties along orientations.