The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.10 Compound solar cells

[15a-2M-1~13] 13.10 Compound solar cells

Tue. Sep 15, 2015 9:00 AM - 12:15 PM 2M (224-1(South))

座長:荒木 秀明(長岡高専)

10:00 AM - 10:15 AM

[15a-2M-5] Fabrication of Cu2ZnSnS4 Solar Cells with In2S3 Buffer Layers

〇chigusa ozaki1, Feng Jiang1, Takashi Harada1, Shuji Nakanishi1, Shigeru Ikeda1 (1.Osaka Univ.)

Keywords:solar cells,CZTS

In2S3 film has been attracted considerable interest as new buffer layer for Cu2ZnSnS4 (CZTS)solar cells. In this study, we fabricated CZTS solar cells with various thickness of In2S3 buffer layers and the photovoltaic performance was investigated. From the analysis, the improvement of photovoltaic performance of CZTS solar cells with post-heating of In2S3 layer was found. The champion device of 100nm-thick In2S3/CZTS exhibited efficiency of 6.9 %.