Oral presentation

[14a-2M-1~11] 13.10 Compound solar cells

Mon. Sep 14, 2015 9:00 AM - 12:15 PM 2M (224-1(South))

座長:八木修平(埼玉大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:30 AM

[14a-2M-1] [JSAP Best Review Paper Award Speech] Multiple carrier interactions in semiconductor nanostructures for high-efficiency solar cell applications

〇Yoshihiko Kanemitsu¹ (1.Kyoto Univ.)

9:30 AM - 9:45 AM

▼ [14a-2M-2] Correlation between Capping Ligands and Photovoltaic Properties in PbS Quantum Dot Solar Cells

〇(P)Jin Chang^1,4, Yuki Kuga¹, Taro Toyoda^1,4, Yuhei Ogomi^2,4, Shuzi Hayase^2,4, Kenji Katayama³, Qing Shen^1,4 (1.Univ. Electro-Commun., 2.Kyushu Inst. Tech., 3.Chuo Univ., 4.CREST JST)

9:45 AM - 10:00 AM

[14a-2M-3] Device simulation of thin film solar cell characteristics considering Fabry-Perot cavity effect

〇(M2)Mizuki Mori^1,2 (1.The Univ. of Tokyo, 2.RCAST)

10:00 AM - 10:15 AM

[14a-2M-4] Defect Levels in GaAs p⁺n Diodes Embedded with InAs Quantum Dot Layers

〇Shinichiro Sato^1,2, Kenneth Schmieder², Seth Hubbard³, David Forbes³, Jeffery Warner², Takeshi Ohshima¹, Robert Walters³ (1.JAEA QuBS, 2.NRL, 3.RIT)

10:15 AM - 10:30 AM

[14a-2M-5] Effect of Sequential Tunneling on Performance of Quantum-Dot Intermediate-Band Solar Cells

〇Katsuhisa Yoshida¹, Yoshitaka Okada¹, Nobuyuki Sano² (1.RCAST, The Univ. Tokyo, 2.Univ. Tsukuba)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[14a-2M-6] Ultra-fast Time Resolved Photo-carrier Transport Process in InAs/GaAs Quantum Dot Superlattice Solar Cell

〇Taizo Tanibuchi¹, Tmoyuki Kada¹, Shigeo Asahi¹, Takashi Kita¹ (1.Kobe Univ.)

11:00 AM - 11:15 AM

[14a-2M-7] Hot-carrier cooling process in InAs/GaAs quantum dot superlattices

〇Yukihiro Harada¹, Naofumi Kasamatsu¹, Daiki Watanabe¹, Takashi Kita¹ (1.Kobe Univ.)

11:15 AM - 11:30 AM

△ [14a-2M-8] Hot-carrier solar cells using InAs/GaAs quantum dot super lattices

〇Daiki Watanabe¹, Yukihiro Harada¹, Toshiyuki Kaizu¹, Kita Takashi¹ (1.Kobe Univ.)

11:30 AM - 11:45 AM

[14a-2M-9] Bias dependence of dot-in-well intermediate-band solar cell characteristics

〇(DC)Shigeo Asahi¹, Haruyuki Teranishi¹, Taizo Tanibuchi¹, Daiki Watanabe¹, Toshiyuki Kaizu¹, Takashi Kita¹ (1.Kobe Univ.)

11:45 AM - 12:00 PM

△ [14a-2M-10] Improvement of Carrier Collection Efficiency for Filed-Damped Quantum Dot Solar Cells

〇Yasushi Shoji¹, Katsuhisa Yoshida¹, Yoshitaka Okada¹ (1.RCAST, The Univ. of Tokyo)

12:00 PM - 12:15 PM

△ [14a-2M-11] Design Optimization for Two-Step Photon Absorption by Infrared Photocurrent Spectroscopy

〇Ryo Tamaki¹, Yasushi Shoji¹, Yoshitaka Okada¹ (1.RCAST, The Univ. of Tokyo)

Oral presentation

[14p-2M-1~22] 13.10 Compound solar cells

Mon. Sep 14, 2015 1:30 PM - 7:15 PM 2M (224-1(South))

座長:曽我部東馬(東大),石塚尚吾(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[14p-2M-1] Observation of Mini-band Formation in Rectangular and Step Super-lattice Solar Cells

〇Takanori Usuki¹, Tsubasa Nakamura¹, Kouki Matsuoti¹, Hironori Kuradome¹, Kento Aihara¹, Kasidit Toprasertpong², Hiromasa Fujii², Masakazu Sugiyama², Atsuhiko Hukuyama¹, Tetsuo Ikari¹ (1.Miyazaki Univ., 2.Tokyo Univ.)

1:45 PM - 2:00 PM

[14p-2M-2] Application of Si bottom cells with the inverted pyramid structures for the multi-junction solar cells

〇Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

2:00 PM - 2:15 PM

[14p-2M-3] Influence of annealing on characteristic of wafer bonded multi-junction solar cell.

〇RYO SHIBASAKI¹, Morimasa Kaminishi¹, Shunichi Sato¹, Yusuke Hayashi², Junichi Suzuki², Nobuhiko Nishiyama² (1.Ricoh Institute of Future Technology, 2.Tokyo Institute of Technology Dept. of Electrical and Electronic Engineering)

2:15 PM - 2:30 PM

△ [14p-2M-4] Detailed Analysis of Bonding Interfaces in Smart Stacking Structures Ⅱ

〇(M1)SHOICHIRO NONAKA¹, FURUKAWA AKIO¹, MAKITA KIKUO², MIZUNO HIDENORI², SUGAYA TAKEYOSHI², NIKI SHIGERU² (1.Tokyo Univ. of science, 2.AIST)

2:30 PM - 2:45 PM

[14p-2M-5] Fabrication of InGaAsP 2nd cell using MBE for Smart Stacked Multijunction Solar Cells

〇(M2)Toru Mochiduki^1,2, Takeyosi Sugaya², Takeshi Tayagaki², Kikuo Makita², Ryuji Oshima², Koji Mathubara², Yoshinobu Okano¹ (1.TCU, 2.AIST)

2:45 PM - 3:00 PM

▲ [14p-2M-6] Bias-voltage dependence of time-resolved photoluminescence decays in solar cells

〇(PC)David Tex^1,4, Hidefumi Akiyama^2,4, Mitsuru Imaizumi³, Yoshihiko Kanemitsu^1,4 (1.ICR Kyoto Univ., 2.ISSP Tokyo Univ., 3.JAXA, 4.JST-CREST)

3:00 PM - 3:15 PM

△ [14p-2M-7] Investigation of Open-Circuit Voltage under High Concentrated Light from Electroluminescence Spectra

〇Tomoyuki Inoue¹, Kasidit Toprasertpong¹, Amaury Delamarre^1,2, Kentaroh Watanabe^1,2, JF Guillemoles^1,2, Masakazu Sugiyama^1,2, Yoshiaki Nakano^1,2 (1.Tokyo Univ, 2.NextPV LIA CNRS-RCAST)

3:15 PM - 3:30 PM

[14p-2M-8] Quantitative Electroluminescence Imaging of Multi-Junction Solar Cells II

〇Masahiro Yoshita¹, Lin Zhu¹, Changsu Kim¹, Hidefumi Akiyama¹, Shaoqiang Chen², Toshimitsu Mochizuki³, Hidehiro Kubota⁴, Tetsuya Nakamura⁵, Mitsuru Imaizumi⁵, Yoshihiko Kanemitsu⁶ (1.ISSP, Univ. of Tokyo, 2.ECNU, 3.FREA, AIST, 4.ATTO, 5.JAXA, 6.ICR, Kyoto Univ.)

3:30 PM - 3:45 PM

▲ [14p-2M-9] Dependence of internal radiative efficiencies on radiative damages in multi-junction tandem solar cells via absolute electroluminescence measurements

〇(P)LIN ZHU¹, Yochita Masahiro¹, Chen Shaoqiang², Mochizuki Toshimitsu³, Kim Changsu¹, Imaizumi Mitsuru⁴, Kanemitsu Yoshihiko⁵, Akiyama Hidefumi¹ (1.Univ. of Tokyo, 2.East China Normal Univ., 3.AIST, 4.JAXA, 5.ICR, Kyoto Univ.)

3:45 PM - 4:00 PM

[14p-2M-10] Comparison of Radiation Response of Generation Current of Component Subcells in IMM Triple-Junction Solar Cells

〇Mitsuru Imaizumi¹, Taishi Sumita¹, Takeshi Ohshima² (1.JAXA, 2.JAEA)

Break （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[14p-2M-11] Precipitation-free-Chemical Bath Deposition Process for preparing Zn(S,O,OH) Buffer Layer on CIGS Layer

〇Masanobu Izaki¹, Tetsuhito Okamoto¹, Takeshi Maki¹, Hajime Shibata², Shigeru Niki² (1.Toyohashi Univ. Tech, 2.AIST)

4:30 PM - 4:45 PM

[14p-2M-12] Characterization of depletion capacitance of CdS/CIGS by electrostatic force microscopy

〇Tomoaki Ishii¹, Takashi Minemoto³, Takuji Takahashi^1,2 (1.IIS, Univ. Tokyo, 2.INQIE, Univ. Tokyo, 3.Ritsumeikan Univ.)

4:45 PM - 5:00 PM

[14p-2M-13] Highly efficient Cu(In,Ga)Se₂ solar cells with a single graded band profile by control of the valence band offset

〇Tomohiro Ogihara¹, Adiyudha Sadono¹, Nishimura Takahito¹, Akira Yamada^1,2 (1.Tokyo Tech., 2.PVREC, Tokyo Tech.)

5:00 PM - 5:15 PM

△ [14p-2M-14] Investigation of Na diffusion effects on peeled-off flexible Cu(In,Ga)Se₂ solar cells

〇(D)Adiyudha Sadono¹, Tomihiro Ogihara¹, Masashi Hino³, Kenji Yamamoto³, Akira Yamada^1,2 (1.Tokyo Tech, 2.PVREC, Tokyo Tech, 3.Kaneka)

5:15 PM - 5:30 PM

▲ [14p-2M-15] Investigation of the Potassium Fluoride Post-deposition Treatment with and without Se Vapor on CIGS Solar Cell Performance

〇(P)Ishwor Khatri¹, Hiroshi Yamaguchi¹, Mutsumi Sugiyama¹, Tokio Nakada¹ (1.Tokyo University of Science)

5:30 PM - 5:45 PM

[14p-2M-16] Atomic structural analysis of CuInSe₂ single crystal by X-ray fluorescence holography

〇Yuuma Kitamura¹, Sho Shirakata¹, Hideto Miyake², Naohisa Happo³, Shinya Hosokawa⁴, Kouichi Hayashi⁵ (1.Ehime Univ., 2.Mie Univ., 3.Hiroshima City Univ., 4.Kumamoto Univ., 5.Tohoku Univ.)

5:45 PM - 6:00 PM

[14p-2M-17] Electronic structures of MoSe₂ and MoS₂ produced at interface between absorber and Mo layers in polycrystalline thin film solar cells by first-principles calculation

〇(PC)Akio Shigemi¹, Takahiro Wada¹ (1.Ryukoku Univ.)

6:00 PM - 6:15 PM

[14p-2M-18] Improvement on depth profile of Zn for high-efficiency ZnCuGaSe₂ solar cell

〇TERUAKI YAMAMOTO¹, Takayuki Negami¹, Koji Matsubara², Shigeru Niki² (1.Panasonic, 2.AIST)

6:15 PM - 6:30 PM

△ [14p-2M-19] Fabrication of transparent p-type conductive SrCuSeF thin films and application to CdTe solar cells

〇(M1)shuya kitabayashi¹, Toshiyuki Kawabe¹, Koichi Yamamoto¹, Hiroshi Sakakima¹, Takahiro Wada¹, Yohei Ogawa², Aikyo Hosono², Tamotsu Okamoto² (1.Ryukoku Univ., 2.NIT, Kisarazu)

6:30 PM - 6:45 PM

△ [14p-2M-20] Synthesis and electrical properties of n-type bulk SnS

〇(D)Yuki Iguchi¹, Taiki Sugiyama¹, Hiroshi Yanagi¹, Zewen Xiao², Toshio Kamiya², Hideo Hosono² (1.Univ. of Yamanashi, 2.Tokyo Tech)

6:45 PM - 7:00 PM

[14p-2M-21] Effect of sodium fluoride for sulfurization of SnS thin films

〇Tsubasa Yokoi¹, Shuntaro Mikami¹, Satoru Aihara¹, Hiroki Sumi¹, Ishwor Khatri¹, Mutsumi Sugiyama¹ (1.Faculty of Science and Technology/RIST, Tokyo Univ. of Science)

7:00 PM - 7:15 PM

[14p-2M-22] Stability of electrochemically deposited Cu_xZn_yS thin films

〇BAYINGAERDI TONG¹, MASAYA ICHIMURA¹ (1.Nagoya Inst. of Tech.)

Oral presentation

[15a-2M-1~13] 13.10 Compound solar cells

Tue. Sep 15, 2015 9:00 AM - 12:15 PM 2M (224-1(South))

座長:荒木秀明(長岡高専)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[15a-2M-1] Synthesis and bandgap control of non-stoichiometric CZTS nanoparticles

Wataru Oyaizu¹, Masanari Kawase¹, 〇Yasushi Hamanaka¹, Toshihiro Kuzuya² (1.Nagoya Inst. Tech., 2.Muroran Inst. Tech.)

9:15 AM - 9:30 AM

△ [15a-2M-2] Growth of Cu₂ZnSnS₄ thin films from Cl-free source materials by mist CVD method

〇Takumi Ikenoue¹, Yuichiro Watanabe¹, Masao Miyake¹, Tetsuji Hirato¹ (1.Kyoto Univ.)

9:30 AM - 9:45 AM

[15a-2M-3] Densiication of spray-coated films grown by Cu₂ZnSnS₄ nanoparticle

〇Kanta Sugimoto¹, Jun Kuwana¹, Naoki Suyama¹, Tetsuo Satake², Yiwen Zhang², Akira Yamada^1,3 (1.Dept. Physical Electronics, Tokyo Tech., 2.Toppan Printing Co. Ltd, 3.Photovoltaics Reserch Center, Tokyo Tech.)

9:45 AM - 10:00 AM

△ [15a-2M-4] Decrease of voids formation in Cu₂ZnSn(S,Se)₄ thin film solar cells during spray process

〇(M2)Jun Kuwana¹, Kanta Sugimoto¹, Naoki Suyama¹, Tetsuo Satake², Yiwen Zhang², Akira Yamada^1,3 (1.Tokyo Tech., 2.Toppan Printing Co., 3.PVREC, Tokyo Tech.)

10:00 AM - 10:15 AM

[15a-2M-5] Fabrication of Cu₂ZnSnS₄ Solar Cells with In₂S₃ Buffer Layers

〇chigusa ozaki¹, Feng Jiang¹, Takashi Harada¹, Shuji Nakanishi¹, Shigeru Ikeda¹ (1.Osaka Univ.)

10:15 AM - 10:30 AM

[15a-2M-6] Photovoltaic properties of CZTS cells using ALD-(Zn,Sn)O buffer layer

〇Shin Tajima¹, Mitsutaro Umehara¹, Takahiro Mise¹, Tatsuo Fukano¹, Tadayoshi Itoh¹ (1.Toyota CRDL)

10:30 AM - 10:45 AM

[15a-2M-7] Improving the performance of CZTS thin-film solar cells by multistage coevaporation with NaF precursor layers

〇Shin Tajima¹, Takahiro Mise¹, Tatsuo Fukano¹, Kazuo Higuchi¹, Tsukasa Washio^2,3, Kazuo Jimbo^2,3, Hironori Katagiri^2,3 (1.Toyota CRDL, 2.NIT, Nagaoka college, 3.CREST, JST)

10:45 AM - 11:00 AM

△ [15a-2M-8] Characterization of optical and recombination losses in Cu₂ZnSnSe₄ solar cells by quantum efficiency simulation

〇Akihiro Nakane¹, Hitoshi Tampo², Shohei Fujimoto¹, Kang Min Kim², Hajime Shibata², Shigeru Niki², Hiroyuki Fujiwara¹ (1.Gifu Univ., 2.AIST)

11:00 AM - 11:15 AM

[15a-2M-9] Cu₂ZnSnSe₄ thin-film solar cells fabricated using Cu₂SnSe₃/ZnSe bilayers

〇Kangmin Kim¹, Hitoshi Tampo¹, Hajime Shibata¹, Koji Matsubara¹, Shigeru Niki¹ (1.AIST)

11:15 AM - 11:30 AM

[15a-2M-10] Na incorporation effect for Cu₂ZnSnSe₄ solar cells

〇hitoshi Tampo¹, Kangmin Kim¹, Shinho Kim¹, Hajime Shibata¹, Shigeru Niki¹ (1.AIST)

11:30 AM - 11:45 AM

▲ [15a-2M-11] The investigation of Ge incorporation effects in Cu₂ZnSnSe₄ thin-film solar cells (2)

〇(P)Kim Shinho¹, Kang Min Kim¹, Hitoshi Tampo¹, Hajime Shibata¹, Koji Matsubara¹, Shigeru Niki¹ (1.AIST)

11:45 AM - 12:00 PM

[15a-2M-12] Evaluation of thiourea treatment for Cu₂ZnSn(S,Se)₄ solar cells

〇(M2)Kento Furuta¹, Motoki Watanabe¹, Noriyuki Sakai³, Takuya Kato³, Hiroki Sugimoto³, Akira Yamada^1,2 (1.Tokyo Tech., 2.PVREC Tokyo Tech., 3.SOLAR FRONTIER)

12:00 PM - 12:15 PM

[15a-2M-13] in-situ Characterization of Band Alignment at Zn_1-xMg_xO/Cu₂ZnSn(S,Se)₄ Interface

〇YUSUKE UDAKA¹, Yuki Suwahara¹, Suehiro Kawamura¹, Shinichi Takagi¹, Kenta Kawasaki¹, Hajime Shibata², Koji Matsubara², Sakae Niki², Noriyuki Sakai³, Takuya Kato³, Hironori Sugimoto³, Norio Terada^1,2 (1.Kagoshima Univ., 2.AIST, 3.Solar Frontier K.K.)

Poster presentation

[15p-PB1-1~24] 13.10 Compound solar cells

Tue. Sep 15, 2015 1:30 PM - 3:30 PM PB1 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[15p-PB1-1] InGaN/GaN MQW solar cell structure grown on GaN/Ga₂O₃ template substrates

〇Noriyuki Watanabe¹, Manabu Mitsuhara¹, Naoteru Shigekawa² (1.NTT Device Technology Labs., 2.Osaka City Univ.)

1:30 PM - 3:30 PM

[15p-PB1-2] Method for Estimation of Open-circuit Voltage of A Solar Cells Using Absolute Photoluminescence Intensity

〇Tetsuya Nakamura¹, Mitsuru Imaizumi¹, Masahiro Yoshita², Hidefumi Akiyama² (1.JAXA, 2.ISSP, Univ. of Tokyo)

1:30 PM - 3:30 PM

[15p-PB1-3] Photo-excited carrier effects in high-density InAs/GaAsSb QD layers

〇(M1)Naoki Akimoto¹, Koichi Yamaguchi¹ (1.UEC)

1:30 PM - 3:30 PM

▼ [15p-PB1-4] Photoexcited Hole Cooling Dynamics in PbSe/CdSe Core/Shell Heterostructure Quantum Dots

〇Yaohong Zhang¹ (1.Univ. Electro-Commun.)

1:30 PM - 3:30 PM

▼ [15p-PB1-5] Tuning the photovoltaic properties and carrier transport of PbS bulk heterojunction quantum dot solar cells by tailoring the device architecture

〇(D)CHAO DING¹ (1.Univ. Electro-Commun.)

1:30 PM - 3:30 PM

[15p-PB1-6] Fabrication of visible-light transmitting solar cells composed of a NiO:Li / ZnO heterojunction

〇Hiroshi Nakai¹, Ryo Maeda¹, Airi Ogasawara¹, Kazuma Moriyama¹, Aika Yamada¹, Kenta Kumagai¹, Gaku Sugimoto¹, Ishwor Khatri¹, Sigefusa Chichibu², Mutsumi Sugiyama¹ (1.Faculty of Science & Technology / RIST, Tokyo University of Science, 2.IMRAM, Tohoku University)

1:30 PM - 3:30 PM

[15p-PB1-7] Growth of Cu₂O thin films by RF reactive sputtering method for realizing Cu₂O solar cells

〇Kazuma Moriyama¹, Mutsumi Sugiyama¹ (1.Faculty of Sci. & Tech. / RIST, Tokyo Univ. of Science)

1:30 PM - 3:30 PM

[15p-PB1-8] Film formation of CuAlO2 by spray method and evaluation by cyclic voltammetry

〇Sena Morita¹, Suzuki Takuya¹ (1.Kitakyu Univ)

1:30 PM - 3:30 PM

[15p-PB1-9] Preparation and characterization of FeSe films by electrodeposition (III)

〇(M2)tomonori nagaya¹, makoto takahashi¹, takaya suzuki¹, masahiro tahashi¹, sadao ohkido¹ (1.Chubu Univ.)

1:30 PM - 3:30 PM

▼ [15p-PB1-10] Synthesis of CIS Nanoparticles through Chemical Reactions in Aqueous Solution

〇Hugo Erawan¹, Shun Yokoyama¹, Hideyuki Takahashi¹, Kazuyuki Tohji¹ (1.Tohoku Univ.)

1:30 PM - 3:30 PM

[15p-PB1-11] Synthesis of CIGS(Cu(In,Ga)Se₂) photovoltaic materials in aqueous solution to construct printable solar cell

〇Masaki Takagi¹, Shun Yokoyama¹, Hideyuki Takahashi¹, Kazuyuki Tohji¹ (1.Tohoku Univ.)

1:30 PM - 3:30 PM

[15p-PB1-12] Investigation of crystal structure for the solubility conditions of porous CuInS₂ crystals

〇Yoji Akaki¹, Mizuki Nagasaki¹ (1.Miyakonojo Coll. Tech.)

1:30 PM - 3:30 PM

[15p-PB1-13] S anneal treatment of CuInS₂ thin film using pulse laser deposition

〇Pohan Tseng¹, Shim Yong-Gu², Wakita Kazuki¹ (1.Chiba Inst. of Tech., 2.Osaka Pref.Univ.)

1:30 PM - 3:30 PM

[15p-PB1-14] Crystal growth and evaluation of Cu_xAg_1-xInS₂ semiconductor

〇Hiroki Iwamaru¹, Shunji Ozaki¹ (1.Gunma Univ.)

1:30 PM - 3:30 PM

[15p-PB1-15] The Effect of Thermal Annealing for SnS Thin Film Fabricated by Spray Pyrolysis

〇Yu Ishikawa¹, Hisashi Miyazaki¹, Yoichi Okamoto¹, Jun Morimoto¹ (1.Natl. Def. Acad.)

1:30 PM - 3:30 PM

[15p-PB1-16] Preparation of Cu₂SnS₃ Bulk Single Crystals by Chemical Vapor Transport Method

〇Yusuke MATSUMOTO¹, Naoya AIHARA¹, Atsushi MUNEMURA¹, Kunihiko TANAKA¹ (1.Nagaoka Univ. Tech.)

1:30 PM - 3:30 PM

[15p-PB1-17] Influence of a white light bias on the performance of Cu₂Sn_1-xGe_xS₃ (CTGS) solar cells

〇Mitsutaro Umehara¹, Yasuhiko Takeda¹, Shin Tajima¹, Tomoyoshi Motohiro¹, Takenobu Sakai², Ryosuke Maekawa² (1.Toyota CRDL, 2.Toyota Motor Corp.)

1:30 PM - 3:30 PM

△ [15p-PB1-18] Basic study for development of aqueous synthesis method of tin sulfides for applying to thin-film compound semiconductor solar cells

〇Takashi Mabuchi¹, Shun Yokoyama¹, Hideyuki Takahashi¹, Kazuyuki Tohji¹ (1.Tohoku Univ.)

1:30 PM - 3:30 PM

[15p-PB1-19] Preparation of Cu₂ZnSn(S,Se)₄ thin film solar cells by evaporation using Cu₂ZnSnSe₄ compound

Mitsuki Nakashima¹, Tatsuya Sakamoto¹, 〇Toshiyuki Yamaguchi¹ (1.NIT, Wakayama Coll.)

1:30 PM - 3:30 PM

[15p-PB1-20] Preparation of Cu₂ZnSnSe₄ thin films by sequential evaporation method of compound and effect of annealing

〇Mitsuki Nakashima¹ (1.National Institute of Technology, Wakayama College)

1:30 PM - 3:30 PM

[15p-PB1-21] Composition ratio control of Cu₂ZnSnS₄ thin films using PLD method

〇hiroki miura¹, Yong-Gu Shim², Kazuki Wakita¹ (1.Chiba Inst. of Tech., 2.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

[15p-PB1-22] Fabrication of CZTS thin film from amorphous oxide thin film by supercritical fluid selenization/sulfurization

〇(DC)Yuta Nakayasu¹, Takaaki Tomai¹, Nobuto Oka¹, Kanako Shojiki², Shigeyuki Kuboya², Ryuji Katayama², Masatomo Sumiya³, Itaru Honma¹ (1.IMRAM, 2.IMR, 3.NIMS)

1:30 PM - 3:30 PM

[15p-PB1-23] Fabrication of CZTS thin film solar cell under air atmosphere by ligand exchage method

〇Kentaro Abe^1,2, Heping Shen², Xin Li^1,2, Hong Ling², Mitsumasa Iwamoto¹ (1.Tokyo Tech., 2.Tsinghua Univ.)

1:30 PM - 3:30 PM

[15p-PB1-24] Effects of Annealing Atmosphere of Thin-films Deposited by Cu₂ZnSnS₄ Nanoparticles

〇Toshimasa Suzuki¹, Shigeo Hori², Tsukasa Suzuki², Shuichi Nonomura² (1.JFCC, 2.Gifu Univ.)

Sessions

13 Semiconductors » 13.10 Compound solar cells

[14a-2M-1~11] 13.10 Compound solar cells

▼ [14a-2M-2] Correlation between Capping Ligands and Photovoltaic Properties in PbS Quantum Dot Solar Cells

△ [14a-2M-8] Hot-carrier solar cells using InAs/GaAs quantum dot super lattices

△ [14a-2M-10] Improvement of Carrier Collection Efficiency for Filed-Damped Quantum Dot Solar Cells

△ [14a-2M-11] Design Optimization for Two-Step Photon Absorption by Infrared Photocurrent Spectroscopy

[14p-2M-1~22] 13.10 Compound solar cells

△ [14p-2M-4] Detailed Analysis of Bonding Interfaces in Smart Stacking Structures Ⅱ

▲ [14p-2M-6] Bias-voltage dependence of time-resolved photoluminescence decays in solar cells

△ [14p-2M-7] Investigation of Open-Circuit Voltage under High Concentrated Light from Electroluminescence Spectra

▲ [14p-2M-9] Dependence of internal radiative efficiencies on radiative damages in multi-junction tandem solar cells via absolute electroluminescence measurements

△ [14p-2M-14] Investigation of Na diffusion effects on peeled-off flexible Cu(In,Ga)Se2 solar cells

▲ [14p-2M-15] Investigation of the Potassium Fluoride Post-deposition Treatment with and without Se Vapor on CIGS Solar Cell Performance

△ [14p-2M-19] Fabrication of transparent p-type conductive SrCuSeF thin films and application to CdTe solar cells

△ [14p-2M-20] Synthesis and electrical properties of n-type bulk SnS

[15a-2M-1~13] 13.10 Compound solar cells

△ [15a-2M-2] Growth of Cu2ZnSnS4 thin films from Cl-free source materials by mist CVD method

△ [15a-2M-4] Decrease of voids formation in Cu2ZnSn(S,Se)4 thin film solar cells during spray process

△ [15a-2M-8] Characterization of optical and recombination losses in Cu2ZnSnSe4 solar cells by quantum efficiency simulation

▲ [15a-2M-11] The investigation of Ge incorporation effects in Cu2ZnSnSe4 thin-film solar cells (2)

[15p-PB1-1~24] 13.10 Compound solar cells

▼ [15p-PB1-4] Photoexcited Hole Cooling Dynamics in PbSe/CdSe Core/Shell Heterostructure Quantum Dots

▼ [15p-PB1-5] Tuning the photovoltaic properties and carrier transport of PbS bulk heterojunction quantum dot solar cells by tailoring the device architecture

▼ [15p-PB1-10] Synthesis of CIS Nanoparticles through Chemical Reactions in Aqueous Solution

△ [15p-PB1-18] Basic study for development of aqueous synthesis method of tin sulfides for applying to thin-film compound semiconductor solar cells

Authentication

△ [14p-2M-14] Investigation of Na diffusion effects on peeled-off flexible Cu(In,Ga)Se₂ solar cells

△ [15a-2M-2] Growth of Cu₂ZnSnS₄ thin films from Cl-free source materials by mist CVD method

△ [15a-2M-4] Decrease of voids formation in Cu₂ZnSn(S,Se)₄ thin film solar cells during spray process

△ [15a-2M-8] Characterization of optical and recombination losses in Cu₂ZnSnSe₄ solar cells by quantum efficiency simulation

▲ [15a-2M-11] The investigation of Ge incorporation effects in Cu₂ZnSnSe₄ thin-film solar cells (2)