The 76th JSAP Autumn Meeting, 2015

Presentation information

Poster presentation

13 Semiconductors » 13.10 Compound solar cells

[15p-PB1-1~24] 13.10 Compound solar cells

Tue. Sep 15, 2015 1:30 PM - 3:30 PM PB1 (Shirotori Hall)

1:30 PM - 3:30 PM

[15p-PB1-1] InGaN/GaN MQW solar cell structure grown on GaN/Ga2O3 template substrates

〇Noriyuki Watanabe1, Manabu Mitsuhara1, Naoteru Shigekawa2 (1.NTT Device Technology Labs., 2.Osaka City Univ.)

Keywords:Nitride semiconductor,Solar cell,Gallium oxide substrate

We grew InGaN/GaN MQW structure on Ga2O3/GaN template substrate and GaN substrate and investigated their optical properties. Photoluminescence (PL) and time-resolved PL measurements indicates no difference due to the kind of substrates, suggesting that the optical properties of InGaN/GaN MQW on the Ga2O3/GaN template substrate are quite similar to those on the GaN substrates.