[15p-PB1-1~24] 13.10 Compound solar cells

[15p-PB1-2] Method for Estimation of Open-circuit Voltage of A Solar Cells Using Absolute Photoluminescence Intensity

〇Tetsuya Nakamura¹, Mitsuru Imaizumi¹, Masahiro Yoshita², Hidefumi Akiyama² (1.JAXA, 2.ISSP, Univ. of Tokyo)

Keywords:Solar cell,Photoluminescence,Electroluminescence

We have been developed InGaP/GaAs/InGaAs IMM3J solar cells. They have InGaAs bottom subcell instead of Ge bottom subcell in conventional triple junction solar cells. The change in the bottom subcell helps improve open-circuit voltage (Voc). However, there is the issue for developing high Voc in IMM3J because there is lattice mismatch between InGaAs and GaAs. The goal of this work is to develop the method for estimating Voc of InGaAs subcell from absolute photoluminescence intensity to evaluate in-plane quality of the InGaAs layer.